Semiconductor radiation detector

Abstract

PURPOSE: To avoid cross-talk and improve energy resolution by providing a shielding grid on a radiation incident surface. CONSTITUTION: A semiconductor substrate 6 is made of Si, GaAs, CdTe, HgI or the like and charge clouds (a) of electron-hole pairs are created in the substrate 6 by an incident radiation. On the radiation incident surface of the semiconductor substrate 6, charge collecting electrodes 8 which collect the charge clouds (a) and a shielding grid 9 between the collecting electrodes 8 are provided. The shielding grid 9 is made of material (such as lead Pb or tungsten W) which has high radiation blocking capability and is composed of a shielding layer 9a and an insulating layer 96 which insulates the shielding layer 9a from the charge collecting electrodes 8. A common electrode 7 is provided so as to face the charge collecting electrodes 8 with the semiconductor substrate 6 between. COPYRIGHT: (C)1988,JPO&Japio

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Cited By (3)

    Publication numberPublication dateAssigneeTitle
    JP-2008180713-AAugust 07, 2008General Electric Co , ゼネラル・エレクトリック・カンパニイGeneral Electric CompanyMethod and apparatus to reduce charge sharing in pixellated energy discriminating detectors
    JP-S6477969-AMarch 23, 1989Shimadzu CorpSemiconductor radiation detecting element
    US-8564084-B2October 22, 2013Koninklijke Philips N.V.Radiation detection and a method of manufacturing a radiation detector