PURPOSE: To prevent the generation of foreign matters in a forming process of a conductor film by keeping a wafer at a specific temperature when a TaMo layer, an Au layer and another TaMo layer are successively formed on the wafer by an electronic beam vapor deposition process for production of the conductor film.
CONSTITUTION: A magnetic bubble memory element contains a conductor pattern formed by a conductor film having a 3-layer structure including a TaMo layer, an Au layer and another TaMo layer. When such a bubble memory element is produced, said three layers are successively formed on a wafer by an electronic beam deposition process for production of the conductor film. In this case, the wafer is kept at 150W200°C. In other words, the foreign matters remain after etching and deteriorate the transfer characteristics of a bubble transfer path in case the wafer temperature is too high when the conductor film is formed. Thus the wafer temperature is lowered so that the remaining foreign matters are not produced.